| 1. | Both the monomer and the polymer network will depress phase transition temperatures
不同的液晶态可通过控制铁电液晶的温度来获得。 |
| 2. | Ii ) with the increase of the long - range interaction and the interfacial coupling , the pyroelectric coefficient before the phase transition temperature decreases
另外，随着长程相互作用以及界面耦合强度的增强，相变温度以下的热电系数明显减小。 |
| 3. | On the other hand , relationship between doping concentration , phase transition temperature , magnitude of resistance change and hysteresis width was investigated
在此基础上,本文进一步探讨了掺杂浓度与vo _ 2薄膜相变温度、电阻突变数量级以及热滞宽度的关系。 |
| 4. | Then , the effect of vacuum annealing temperature on vo _ 2 thin film phase transition temperature , magnitude of resistance change and hysteresis width by doping zr ~ ( 4 + ) was discussed
( 2 )本文以掺锆为例,探讨了不同的真空退火温度对vo _ 2薄膜的相变温度、电阻突变数量级以及热滞宽度有何影响。 |
| 5. | Since 1980s research about doped vo _ 2 matrix has shown that doping could alter the phase transition temperature of vo _ 2 thin film , and as a result , influence on its optical and electrical properties
从上世纪八十年代开始的对vo _ 2的掺杂研究表明:掺杂能明显改变vo _ 2薄膜的相变温度,进而影响其光电性能。 |
| 6. | We find that i ) with the increase of the long - range interaction , the interfacial coupling and the thickness of one period , the phase transition temperature of the ferroelectric superlartice increases
我们发现，随着长程相互作用和界面耦合作用的增强以及铁电超晶格尺寸的增大，整个材料的相变温度升高。 |
| 7. | It is found that the pyroelectric coefficient and susceptibility increase with the decrease of the magnitude of the long - range interaction and the interfacial coupling when the temperature is lower than the phase transition temperature
我们发现，在相变温度以下，随着双层薄膜的界面耦合的减弱，铁电双层薄膜的热电系数和介电极化率增加。 |
| 8. | 5 ) as the deformation strain increases the reverse transformation temperature and thermal hystersis of tini film increase on the first heating , while the martensitic transformation temperature decreases and r phase transition temperature is constant
随预应变量增大， tint薄膜的第一次逆相变温度升高，相变热滞增大，马氏体相变温度降低， r相变温度无明显变化。 |
| 9. | It is found that the enhancement of the long - range interaction will result in the increment of the phase transition temperature , the increase of the critical transverse field and the decrease of the critical size
采用超越平均场理论计算了长程相互作用对铁电薄膜的物理性质的影响，发现长程相互作用的增强将使铁电薄膜的居里温度升高、临界横场增大、临界尺寸下降。 |
| 10. | Compared with testing results at different annealing temperatures ranging from 350 to 500 c , it was found that vo _ 2 film annealed at 450 c exhibits lower phase transition temperature and significant resistance change
通过对比不同退火温度下的测试结果可知:经450退火后的掺杂vo _ 2薄膜与其它退火温度所得的vo _ 2薄膜相比,具有较低的相变温度以及较为明显的电阻突变数量级。 |
